Ultrapure Green High Photoluminescence Quantum Yield from FAPbBr3 Nanocrystals Embedded in Transparent Porous Films

被引:9
|
作者
Romero-Perez, Carlos [1 ]
Delgado, Natalia Fernaïndez [2 ]
Herrera-Collado, Miriam [2 ]
Calvo, Mauricio E. [1 ]
Miguez, Hernaïn [1 ]
机构
[1] Univ Seville, Inst Ciencias Mat Sevilla, Consejo Super Invest Cientificas, Seville 41092, Spain
[2] Univ Cadiz, Fac Ciencias, Dept Mat Sci Met Engn & Inorgan Chem IMEYMAT, Puerto Real 11510, Spain
关键词
HALIDE-PEROVSKITE NANOCRYSTALS; LIGHT-EMITTING-DIODES; LEAD BROMIDE NANOCRYSTALS; HIGH-EFFICIENCY; SOLAR-CELLS; OPTICAL-PROPERTIES; CRYSTAL-STRUCTURE; FABRICATION; STABILITY; BRIGHT;
D O I
10.1021/acs.chemmater.3c00934
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Achieving highly transparent and emissive films based on perovskite quantum dots (PQDs) is a challenging task since their photoluminescence quantum yield (PLQY) typically drops abruptly when they are used as building blocks to make a solid. In this work, we obtain highly transparent films containing FAPbBr(3) quantum dots that display a narrow green emission (lambda = 530 nm, full width at half-maximum (FWHM) = 23 nm) with a PLQY as high as 86%. The method employed makes use of porous matrices that act as arrays of nanoreactors to synthesize the targeted quantum dots within their void space, providing both a means to keep them dispersed and a protective environment. Further infiltration with poly(methyl methacrylate) (PMMA) increases the mechanical and chemical stability of the ensemble and serves to passivate surface defects, boosting the emission of the embedded PQD and significantly reducing the width of the emission peak, which fulfills the requirements established by the Commission Internationale de l'E ' clairage (CIE) to be considered an ultrapure green emitter. The versatility of this approach is demonstrated by fabricating a color-converting layer that can be easily transferred onto a light-emitting device surface to modify the spectral properties of the outgoing radiation.
引用
收藏
页码:5541 / 5549
页数:9
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