Design of n-CdS/p-CuInTe2/p +-MoS2 thin film solar cell with a power conversion efficiency of 34.32%

Copper indium telluride (CuInTe2)-based n-CdS/p-CuInTe2/p +-MoS2 double-heterostructure solar cell has been investigated numerically by solar cell capacitance simulator (SCAPS-1D). Initially, an adjusted condition among the most influencing parameters e.g. thickness, carrier doping level, and bulk defects of active materials such as CdS window, CuInTe2 absorber, and p +-MoS2 back surface field (BSF) layers has been obtained by a systematic computation. The proposed solar cell exhibits an improved power conversion efficiency (PCE) of 34.32% with VOC =0.927 V, JSC = 42.50 mA/cm2, and FF = 87.14% under the optimized condition. The PCE can be further enhanced to 38.87% introducing sub-bandgap absorption in the MoS2 (300 nm) BSF with Urbach energy, E0 of 0.4 eV. These detailed simulation results reveal a huge potential of CuInTe2 absorber with MoS2 BSF layer for the manufacture of a cost-effective, high-efficiency double-heterojunction thin film solar cell.