Multiple patterning via layout decomposition method for directed self-assembly lithography

被引:0
|
作者
Zhang, Tao [1 ,2 ]
Zhou, Hengyu [1 ,3 ]
Xiong, Shisheng [4 ]
Li, Sikun [1 ,2 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai, Peoples R China
[2] Univ Chinese Acad Sci, Beijing, Peoples R China
[3] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan, Peoples R China
[4] Zhangjiang Lab, Shanghai, Peoples R China
基金
中国国家自然科学基金;
关键词
lithography; directed self-assembly; mask assignment; multiple patterning; RULES;
D O I
10.1117/1.JMM.22.4.043001
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In the sub-7 nm technology nodes, the cost of printing dense via layers increases dramatically. Directed self-assembly (DSA) (DSA) technology with multiple patterning (MP) lithography (DSA-MP) provides a high-volume manufacturing solution with a high throughput and low cost. To enable the technology, a high-quality DSA-MP-aware layout decomposer that contains DSA grouping and MP assignment is necessary. We propose a graph-based heuristic algorithm that minimizes the potential DSA decomposition violations using grouping nodes in the complete graph and the corresponding place-and-route method. Then the grouping result is modified and the MP assignment is solved simultaneously by hybrid algorithms. Experimental results show the efficiency and effectiveness of the proposed method in dealing with large dense vias patterns.(c) 2023 Society of Photo-Optical Instrumentation Engineers (SPIE)
引用
收藏
页数:14
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