Two-Stage Cryogenic HEMT-Based Amplifier for Low-Temperature Detectors

被引：0

作者：

Anczarski, Jadyn ^{[1
,2
,3
]}

Dubovskov, Makar ^{[4
]}

Fink, Caleb W. ^{[5
]}

Kevane, Sukie ^{[1
,2
,3
]}

Kurinsky, Noah ^{[1
,2
,3
]}

Mazumdar, Aparajita ^{[5
]}

Meijer, Samuel J. ^{[5
]}

Phipps, Arran ^{[6
]}

Ronning, Filip ^{[5
]}

Rydstrom, Ivar ^{[4
]}

Simchony, Aviv ^{[1
,2
,3
]}

Smith, Zoe ^{[1
,2
,3
]}

Thomas, Sean ^{[5
]}

Watkins, Samuel L. ^{[5
]}

Young, Betty ^{[4
]}

机构：

[1] Stanford Univ, Dept Phys, Stanford, CA 94305 USA

[2] SLAC Natl Accelerator Lab, Menlo Pk, CA 94025 USA

[3] Stanford Univ, Kavli Inst Particle Astrophys & Cosmol, Stanford, CA 94305 USA

[4] Santa Clara Univ, Dept Mech Engn, Santa Clara, CA 95053 USA

[5] Los Alamos Natl Lab, Los Alamos, NM 87545 USA

[6] Calif State Univ East Bay, Hayward, CA 94542 USA

来源：

JOURNAL OF LOW TEMPERATURE PHYSICS | 2024年 / 214卷 / 3-4期

关键词：

HEMT amplifier; Dark matter detectors; Front-end electronics for detector readout; Analogue electronic circuits;

D O I：

10.1007/s10909-023-03046-1

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To search for dark matter candidates with masses below O(MeV), the SPLENDOR (Search for Particles of Light dark mattEr with Narrow-gap semiconDuctORs) experiment is developing novel narrow-bandgap semiconductors with electronic bandgaps on the order of 1-100 meV. In order to detect the charge signal produced by scattering or absorption events, SPLENDOR has designed a two-stage cryogenic HEMT-based amplifier with an estimated charge resolution approaching the singleelectron level. A low-capacitance ( similar to 1.6 pF) HEMT is used as a buffer stage at T = 10 mK to mitigate effects of stray capacitance at the input. The buffered signal is then amplified by a higher-capacitance ( similar to 200 pF) HEMT amplifier stage at T = 4 K. Importantly, the design of this amplifier makes it usable with any insulating material-allowing for rapid prototyping of a variety of novel detector materials. We present the two-stage cryogenic amplifier design, preliminary voltage noise performance, and estimated charge resolution of 7.2 electrons.

引用

页码：256 / 262

页数：7

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