On the Effect of Parasitic Capacitances on the Voltage Sharing of Series-Connected Diodes

被引:0
|
作者
Ghaderi, Alireza [1 ]
Rajabian, Amir Azam [1 ]
Mohsenzade, Sadegh [1 ]
机构
[1] KN Toosi Univ Technol, Dept Elect Engn, Tehran, Iran
关键词
Diodes; High-voltage; Pulsed Power; Parasitic Elements; STACKED IGBT SWITCH; POWER;
D O I
10.1109/PEDSTC57673.2023.10087154
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Series-connected diodes have numerous applications in high-voltage converters and pulsed power supplies. Providing balanced voltage sharing for the diodes in the series structure is mandatory to avoid diodes break down and cascading failure due to the unbearable overvoltage conditions. One of the important factors affecting the voltage sharing of the diodes is the parasitic capacitance that exists between the diodes and the ground. The frequent charging and discharging of these capacitors after each operation of the diodes injects an extra electrical charge into the diodes junction capacitors. This leads to an unbalanced voltage sharing for the diodes in the off-state since the mentioned electrical charges are not equal. This paper first determines the parasitic capacitors using finite element simulations (COMSOL software) and subsequently calculates the unbalanced voltage sharing of the diodes due to these capacitors. Finally, a proposition is provided to mitigate the negative effect of the parasitic capacitors on the voltage sharing of the series-connected diodes. The PSPICE simulations verified the achievements of the paper.
引用
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页数:5
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