Micro-Transfer-Printed Membrane Distributed Reflector Lasers on Si Waveguide Modulated With 50-Gbit/s NRZ Signal

被引:4
|
作者
Maeda, Yoshiho [1 ]
Aihara, Takuma [1 ]
Fujii, Takuro [1 ]
Hiraki, Tatsurou [1 ]
Takeda, Koji [1 ]
Tsuchizawa, Tai [1 ]
Sugiyama, Hiroki [1 ]
Sato, Tomonari [1 ]
Segawa, Toru [1 ]
Ota, Yasutomo [2 ,3 ]
Iwamoto, Satoshi [3 ,4 ]
Arakawa, Yasuhiko [3 ]
Matsuo, Shinji [1 ]
机构
[1] NTT Corp, NTT Device Technol Labs, Atsugi 2430198, Japan
[2] Keio Univ, Dept Appl Phys & Physicoinformat, Yokohama 2238522, Japan
[3] Univ Tokyo, Inst Nano Quantum Informat Elect, Tokyo 1538505, Japan
[4] Univ Tokyo, Inst Ind Sci, Tokyo 1538505, Japan
关键词
Lasers; optoelectronic devices; silicon photonics; HETEROSTRUCTURE DFB LASER; ROOM-TEMPERATURE; INTEGRATION; OPERATION; INP;
D O I
10.1109/JLT.2023.3265973
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this work, we fabricate directly modulated membrane distributed reflector (DR) lasers on a Si waveguide by utilizing micro-transfer printing method. Micro-transfer printing enables low-loss coupling between the lasers and the silicon photonics circuit, and since it is a back-end process, we can test the lasers prior to integration. A membrane laser is as thick as the Si waveguides, which makes optical coupling between the two quite easy. In addition, membrane lasers with a lateral p-i-n diode structure have low capacitance and a large optical confinement factor, which means they can achieve a low threshold current and high-speed modulation operation with low energy consumption. The fabricated membrane DR laser integrated with a 220-nm-thick Si waveguide exhibits a low threshold current of 1.2 mA and single-mode operation at 1535 nm with a side-mode suppression ratio (SMSR) of about 40 dB at the bias current of 14 mA. It also achieves the E-O bandwidth of over 25 GHz and 50-Gbit/s non-return-to-zero (NRZ) signal modulation with an extinction ratio of 2.5 dB.
引用
收藏
页码:3866 / 3873
页数:8
相关论文
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