Highly reliable bio-inspired spintronic/CNTFET multi-bit per cell nonvolatile memory

This paper proposes a bio-inspired, low-cost, and highly reliable non-volatile memory design with multi-bit storage capability in one cell to answer the existing memory challenges such as high area and high power consumption. The proposed Multi-level memory (MLM) is based on magnetic tunnel junction (MTJ) as a non-volatile memory element and carbon nanotube field-effect transistors (CNTFET). MLM design provides higher data density, lower area, and lower power consumption per bit of the stored data than single-level memories (SLM). MTJs introduce nonvolatility and near-zero leakage current to the proposed MLM design, which is very important in memory cells. Moreover, as no sequential part is used in the proposed MLM, the proposed memory is also immune to energetic particle strikes. The simulation results indicate that our proposed MLM occupies at least an 80% lower area and offers a 20% lower Power Delay Product (PDP) and an 84% lower Power Delay Area Product (PDAP) than the state-of-the-art designs. Moreover, our results validate the SEU and SEMU immunity of the proposed circuit. Furthermore, the comprehensive Monte-Carlo and corner simulations ascertain the robustness of the proposed MLM memory, even in the presence of a significant process variation.