A 24-30 GHz Power Amplifier with >20-dBm Psat and <0.1-dB AM-AM Distortion for 5G Applications in 130-nm SiGe BiCMOS

被引：0
|
作者：
Kamidaki, Chihiro [1 ]
Okuyama, Yuma [1 ]
Kubo, Tatsuo [1 ]
Lee, Wooram [2 ]
Ozdag, Caglar [2 ]
Sadhu, Bodhisatwa
Yamaguchi, Yo [1 ]
Guan, Ning [1 ]
机构：
[1] Fujikura Ltd, Elect Technol R&D Ctr, Sakura 2858550, Japan
[2] IBM Thomas J Watson Res Ctr, Yorktown Hts, NY USA
来源：
IEICE TRANSACTIONS ON ELECTRONICS | 2023年 / E106C卷 / 11期
关键词：
5G; mm-wave; power amplifier; SiGe BiCMOS tecnology; EVM; ACLR; PAE; AM-AM; AM-PM; ARRAY; TECHNOLOGIES; ANTENNAS;
D O I：
10.1587/transele.2023MMI0003
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a power amplifier (PA) designed as a part of a transceiver front-end fabricated in 130-nm SiGe BiCMOS. The PA shares its output antenna port with a low noise amplifier using a low-loss transmission/reception switch. The output matching network of the PA is designed to provide high output power, low AM-AM distortion, and uniform performance over frequencies in the range of 24.25-29.5 GHz. Measurements of the front-end in TX mode demonstrate peak S21 of 30.3 dB at 26.7 GHz, S21 3-dB bandwidth of 9.8 GHz from 22.2 to 32.0 GHz, and saturated output power (Psat) above 20 dBm with power-added efficiency (PAE) above 22% from 24 to 30 GHz. For a 64-QAM 400MHz bandwidth orthogonal frequency division multiplexing (OFDM) signal, -25 dBc error vector magnitude (EVM) is measured at an average output power of 12.3 dBm and average PAE of 8.8%. The PA achieves a competitive ITRS FoM of 92.9.
引用
收藏
页码：625 / 634
页数：10
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