Influence of Si atoms on the structure and electronic properties of amorphous DLC films

被引：6

作者：

Ryaguzov, Alexander ^{[1
]}

Kudabayeva, Madina ^{[1
]}

Myrzabekova, Markizat ^{[1
]}

Nemkayeva, Renata ^{[1
]}

Guseinov, Nazim ^{[1
,2
]}

机构：

[1] Al Farabi Kazakh Natl Univ, Natl Nanotechnol Lab Open Type, Alma Ata, Kazakhstan

[2] KAZALFATECH LTD Res Ctr, Alma Ata, Kazakhstan

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2023年 / 599卷

关键词：

Diamond-like carbon; Thin film; Microscopy; Nanostructure; Nanocrystal; Spectroscopy; Photoluminescence; SILICON-CARBIDE; OPTICAL-PROPERTIES; RAMAN-SPECTRA; TRIBOLOGICAL PROPERTIES; MECHANICAL-PROPERTIES; XPS; PHOTOLUMINESCENCE; SPECTROSCOPY; SCATTERING; POWDERS;

D O I：

10.1016/j.jnoncrysol.2022.121956

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The paper considers the effect of silicon on the formation of the structure and properties of amorphous diamondlike carbon (DLC) films. Thin films of silicon-modified amorphous diamond-like carbon (DLC:Si) were synthesized by magnetron ion-plasma co-sputtering of a combined target. Studies of the structure and properties of amorphous DLC:Si films were carried out in the range of silicon concentrations up to 6.75 at.%. A change in the formation of the film structure is shown using atomic force microscopy (AFM) and transmission electron microscopy (TEM). Raman spectroscopy (RS) and X-ray photoelectron spectroscopy (XPS) revealed a significant change in the local structure of amorphous DLC:Si films. Which, in turn, leads to a change in the density of states of pi-electrons in the band and, as a rule, to a change in the electronic properties.

引用

页数：11

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