Environmentally Stable and Reconfigurable Ultralow-Power Two-Dimensional Tellurene Synaptic Transistor for Neuromorphic Edge Computing

被引:18
|
作者
Yoon, Jeechan [1 ]
You, Bolim [1 ]
Kim, Yuna [1 ]
Bak, Jina [1 ]
Yang, Mino [2 ]
Park, Jihyang [1 ]
Hahm, Myung Gwan [1 ]
Lee, Moonsang [1 ]
机构
[1] Inha Univ, Dept Mat Sci & Engn, Incheon 22212, South Korea
[2] Korea Basic Sci Inst Seoul, Seoul 02841, South Korea
基金
新加坡国家研究基金会;
关键词
ultralow power; 2D tellurene; environmentally stable; synaptic transistors; neuromorphic edge computing; intensively; FIELD-EFFECT TRANSISTORS; DEVICE;
D O I
10.1021/acsami.3c00254
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
While neuromorphic computing can define a new era for next-generation computing architecture, the introduction of an efficient synaptic transistor for neuromorphic edge computing still remains a challenge. Here, we envision an atomically thin 2D Te synaptic device capable of achieving a desirable neuromorphic edge computing design. The hydrothermally grown 2D Te nanosheet synaptic transistor apparently mimicked the biological synaptic nature, exhibiting 100 effective multilevel states, a low power consumption of similar to 110 fJ, excellent linearity, and short-/ long-term plasticity. Furthermore, the 2D Te synaptic device achieved reconfigurable MNIST recognition accuracy characteristics of 88.2%, even after harmful detergent environment infection. We believe that this work serves as a guide for developing futuristic neuromorphic edge computing.
引用
收藏
页码:18463 / 18472
页数:10
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