Synthesis of Lu2O3-Ga2O3-SiO2 Glass as a New Glass Scintillator

We synthesized 20Lu(2)O(3)-30Ga(2)O(3)-50SiO(2) glasses doped with various concentrations of Sn using a floating zone furnace equipped with Xe arc lamps. The samples showed a luminescence band around 450 nm in both photoluminescence (PL) and scintillation spectra. The origin of the luminescence was ascribed to the T1-S0 transition of Sn2+ on the basis of the luminescence wavelength and PL decay time constant. The highest scintillation intensity and PL quantum yield were observed from the 1% Sn-doped sample. The afterglow level tended to decrease with increasing Sn doping, and the afterglow levels of the 1 and 3% Sn-doped samples were comparable to that of the conventional Tl-doped CsI scintillator. The optimal concentration of Sn for the glass was estimated to be 1%.