Preparation and Study of Fe-doped BaZrS3 Magnetic Semiconductors

Chalcogenide perovskites are an emerging class of functional semiconductor materials with unique electronic structures and optoelectronic properties. In this research, the chalcogenide perovskite BaZrS3 nanostructures were prepared by sol-gel method combined with chemical vapor reaction. Besides, BaZr1-xFexS3 magnetic semiconductor was obtained by doping method. The structural, optical, and magnetic properties were studied. The results show that the oxide perovskite BaZrO3 can still exhibit the perovskite structure after vulcanization, i.e., O element substitutes for S element in BaZrS3 Nanostructure. In addition, the sulfide treatment can reduce the band gap width of the sample. At the same time, 3d transition metal elements with localized magnetic moment, such as Fe, are used for cation doping of perovskite B site. The band gap width of the samples can also be systematically regulated by controlling the doping amount of Fe. Particularly, the BaZr0.97Fe0.03S3 and BaZr0.95Fe0.05S3 exhibit room temperature ferromagnetism.