Ultraviolet-Ozone Treatment: An Effective Method for Fine-Tuning Optical and Electrical Properties of Suspended and Substrate-Supported MoS2

被引:3
|
作者
Sarcan, Fahrettin [1 ,2 ]
Armstrong, Alex J. [1 ]
Bostan, Yusuf K. [2 ,3 ]
Kus, Esra [2 ]
McKenna, Keith P. [1 ]
Erol, Ayse [2 ]
Wang, Yue [1 ]
机构
[1] Univ York, Sch Phys Engn & Technol, York YO10 5DD, England
[2] Istanbul Univ, Fac Sci, Dept Phys, TR-34134 Istanbul, Turkiye
[3] Univ Polytech Hauts France, Inst Elect Microelect & Nanotechnol IEMN, CNRS, UMR 8520, F-59313 Valenciennes, France
关键词
MoS2; ultraviolet-ozone (UV-O-3); doping; surface treatment; transition metal dichalcogenide; field-effect transistor; photoluminescence; density functional theory (DFT); TOTAL-ENERGY CALCULATIONS;
D O I
10.3390/nano13233034
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Ultraviolet-ozone (UV-O-3) treatment is a simple but effective technique for surface cleaning, surface sterilization, doping, and oxidation, and is applicable to a wide range of materials. In this study, we investigated how UV-O-3 treatment affects the optical and electrical properties of molybdenum disulfide (MoS2), with and without the presence of a dielectric substrate. We performed detailed photoluminescence (PL) measurements on 1-7 layers of MoS2 with up to 8 min of UV-O-3 exposure. Density functional theory (DFT) calculations were carried out to provide insight into oxygen-MoS2 interaction mechanisms. Our results showed that the influence of UV-O-3 treatment on PL depends on whether the substrate is present, as well as the number of layers. Additionally, 4 min of UV-O-3 treatment was found to be optimal to produce p-type MoS2, while maintaining above 80% of the PL intensity and the emission wavelength, compared to pristine flakes (intrinsically n-type). UV-O-3 treatment for more than 6 min not only caused a reduction in the electron density but also deteriorated the hole-dominated transport. It is revealed that the substrate plays a critical role in the manipulation of the electrical and optical properties of MoS2, which should be considered in future device fabrication and applications.
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页数:11
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