Conductance oscillations of antiferromagnetic layer tunnel junctions

被引:0
|
作者
Choi, Sang-Jun [1 ]
Sun, Hai-Peng [1 ]
Trauzettel, Bjoern [1 ,2 ]
机构
[1] Univ Wurzburg, Inst Theoret Phys & Astrophys, D-97074 Wurzburg, Germany
[2] Wurzburg Dresden Cluster Excellence Ct Qmat, Wurzburg, Germany
关键词
TOPOLOGICAL INSULATOR;
D O I
10.1103/PhysRevB.107.235415
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We study conductance oscillations of antiferromagnetic layer tunnel junctions composed of antiferromagnetic topological insulators such as MnBi2Te4. In the presence of an in-plane magnetic field, we find that the two terminal differential conductances across the junction oscillates as a function of field strength. Notably, the quantum interference at weak fields for the even-layer case is distinctive from the odd-layer case due to the scattering phase shift pi. Consequently, the differential conductance vanishes (maximized) at integer magnetic flux quanta for even-layer (odd-layer) junctions. The conductance oscillations manifest the layer-dependent quantum interference in which symmetries and scattering phases play essential roles. In numerical calculations, we observe that the quantum interference undergoes an evolution from superconducting quantum interference device-like to Fraunhofer-like oscillations as the junction length increases.
引用
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页数:8
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