High operating temperature mid-wavelength infrared HgCdTe focal plane arrays

被引：0

作者：

Qin, Gang ^{[1
]}

Qin, Qiang ^{[1
]}

He, Tian-Ying ^{[1
]}

Song, Lin-Wei ^{[1
]}

Zuo, Da-Fan ^{[1
]}

Yang, Chao-Wei ^{[1
]}

Li, Hong-Fu ^{[1
]}

Li, Yi-Min ^{[1
]}

Kong, Jin-Cheng ^{[1
]}

Zhao, Peng ^{[1
]}

Zhao, Jun ^{[1
]}

机构：

[1] Kunming Inst Phys, Kunming 650223, Peoples R China

来源：

JOURNAL OF INFRARED AND MILLIMETER WAVES | 2023年 / 42卷 / 05期

关键词：

high operating temperature; MWIR; HgCdTe; NETD; operability; TECHNOLOGY;

D O I：

10.11972/j.issn.1001-9014.2023.05.004

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

This paper presents the recent progress in the research of high operating temperature (HOT) mid -wave-length infrared (MWIR) HgCdTe focal plane arrays (FPAs) at Kunming Institute of Physics. By optimizing the structural parameters of mid-wavelength infrared HgCdTe detectors, a 640x512@15 & mu;m mid-wavelength infrared focal plane array (FPA) was fabricated based on high-quality in situ indium-doped HgCdTe film grown by liquid phase epitaxy (LPE) using arsenic-ion-implanted p-on-n planar junction device technology. The spectral response, device dark current, noise equivalent temperature difference (NETD), operability, and the distribution of defective pixels of the prepared p-on-n chip arrays at various operating temperatures were tested using a variable temperature Dewar. The test results demonstrate that the detector has the ability to operate at temperatures above 180 K.

引用

页码：588 / 593

页数：6

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