Surface Treatment of Polyimide Using Solid-source H2O Plasma for Fabrication of Ge Electrode

被引:0
|
作者
Tohnishi, Mie [1 ]
Sato, Mina [1 ]
Matsutani, Akihiro [1 ]
Ubukata, Takashi [2 ]
Matsushita, Sachiko [3 ]
机构
[1] Tokyo Inst Technol, Open Facil Ctr, Semicond & MEMS Proc Div, 4259 Nagatsuta, Midori ku, Yokohama 2268503, Japan
[2] Yokohama Natl Univ, Grad Sch Engn Sci, Dept Chem & Life Sci, 79-5 Tokiwadai, Hodogaya ku, Yokohama 2408501, Japan
[3] Tokyo Inst Technol, Dept Mat Sci & Engn, 2-12-1 Ookayama,Meguro ku, Tokyo 1528550, Japan
关键词
flexible semiconductor electrode; Ge; polyimide; H2O plasma; heterogeneous material adhesion; ADHESION PROPERTIES; CU/CR FILMS;
D O I
10.18494/SAM4276
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
We demonstrated the surface treatment of polyimide using solid-source H2O plasma for the fabrication of Ge thin films as an electrode of flexible devices. By using the solid-source H2O plasma, the internal stress of a polyimide sheet with deposited Ge was decreased, and the adhesion between the polyimide and Ge was also improved. In addition, the solid-source H2O plasma treatment was effective for increasing the bending durability and decreasing the resistance of the Ge electrode on a polyimide surface. Moreover, we analyzed a polyimide surface treated with solid-source H2O plasma, by Fourier transform IR spectroscopy and X-ray photoelectron spectroscopy. We believe that the proposed solid-source H2O plasma process is useful for bonding between polyimide and Ge in the fabrication of flexible semiconductor electrodes.
引用
收藏
页码:1023 / 1033
页数:11
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