Relaxor properties and breakdown strength of Ta doped Sr0.7Bi0.2TiO3-based lead-free ceramics for energy storage applications

被引:2
|
作者
Li, Yifeng [1 ]
Liu, Jingsong [1 ]
Zeng, Mengshi [1 ]
Li, Huiqin [1 ]
Chen, Jingjing [2 ,3 ]
Tang, Bin [2 ,3 ]
机构
[1] Southwest Univ Sci & Technol, Sch Mat & Chem, State Key Lab Environm Friendly Energy Mat, Mianyang 621010, Peoples R China
[2] Univ Elect Sci & Technol China, Natl Engn Res Ctr Electromagnet Radiat Control Mat, Chengdu 611731, Peoples R China
[3] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Device, Chengdu 611731, Peoples R China
基金
中国国家自然科学基金;
关键词
FAST CHARGE-DISCHARGE; ANTIFERROELECTRIC CERAMICS; DIELECTRIC-PROPERTIES; DENSITY; EFFICIENCY; STABILITY; OPTIMIZATION; PERFORMANCE;
D O I
10.1007/s10853-023-09038-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Ferroelectric ceramic capacitors show great potential in pulse power devices for their fast charging-discharging characteristics and immense power density. As a relaxation ferroelectric material, Sr0.7Bi0.2TiO3 has the advantage of high energy storage efficiency. Nevertheless, its low breakdown strength limits its energy storage performance. Herein, Sr0.7Bi0.2Ti(1-1.25x)TaxO(3) (SBT-T) ceramics were synthesized by introducing Ta2O5 with a broad bandgap. On the one hand, the B-site ion disorder enhanced the relaxor behavior of the SBT-T ceramics. On the other hand, the introduction of Ta boosted the impedance and activation energy of the SBT-T ceramics, thus significantly improving their breakdown strength. With the increase in Ta content, the critical electric fields of SBT-T ceramics were monotonically increased from 240 to 370 kV/cm (increased by 54%), and splendid W-rec = 2.33 J/cm(3) and high eta = 91.76% were achieved when x = 0.04 under 290 kV/cm. Additionally, the SBT-0.04T ceramics demonstrated excellent pulse charge-discharge speed (t(0.9) of 81.69 ns) and power density (P-D of 153.39 MW/cm(3)). This research revealed that Ta doping was an effective approach to strengthening breakdown strength, which might provide ideas for improving the energy storage performance of dielectric capacitors.
引用
收藏
页码:16195 / 16207
页数:13
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