Near 5-GHz Longitudinal Leaky Surface Acoustic Wave Devices on LiNbO3/SiC Substrates

work demonstrates a group of longitudinal leaky surface acoustic wave (LL-SAW) resonators and fil-ters using thin-film X-cut lithium niobate on silicon carbide (LiNbO3/SiC). An improved design that exploits a nonstan-dard reflector (NSR) structure to suppress the lateral overtone spurious mode in the LL-SAW response is demonstrated. The fabricated resonators show scalable resonant frequencies from 3.75 to 4.95 GHz, admittance ratios (ARs) between 56.0 and 64.1 dB, and large k(t)(2) between 18.3% and 20%. The fabricated filter with a center frequency of 4.84 GHz shows a minimum insertion loss (IL) of 0.88 dB, an out-of-band rejection of 26 dB, and a 3-dB bandwidth (BW) of 457 MHz, partially covering the fifth-generation (5G) N79 band. The filter design tradeoff between SH mode suppression and BW is also demonstrated. The results herein show the great potential of LL-SAW technologies using LiNbO3/SiC substrate for commercial applications in 5G new radio (NR) and Wi-Fi 5/6 bands.