Improving the Synaptic Behavior with Polar Orthorhombic Phase in Hf0.5Zr0.5O2 Film

被引：2
|
作者：
Zhu, Zihao [1 ,2 ,3 ]
Yang, Hui [1 ,2 ,3 ]
Huang, Xiang [1 ,2 ,3 ]
Wang, Zhaoyang [1 ,2 ,3 ]
Zhang, Yi [1 ,2 ,3 ]
Chen, Weijin [1 ,2 ,3 ]
Zhang, Bangmin [1 ,2 ,3 ]
Zheng, Yue [1 ,2 ,3 ]
机构：
[1] Sun Yat Sen Univ, Sch Phys, Guangdong Prov Key Lab Magnetoelectr Phys & Device, Guangzhou 510275, Peoples R China
[2] Sun Yat Sen Univ, Sch Phys, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China
[3] Sun Yat Sen Univ, Ctr Phys Mech & Biophys, Sch Phys, Guangzhou 510275, Peoples R China
来源：
ACS APPLIED ELECTRONIC MATERIALS | 2023年 / 5卷 / 08期
基金：
中国国家自然科学基金;
关键词：
Hf0; 5Zr0; 5O2; resistanceswitching; polar orthorhombic phase; synaptic behavior; microstructure; THIN-FILMS; FERROELECTRICITY; MEMRISTOR; DEVICE; HAFNIA; HFO2;
D O I：
10.1021/acsaelm.3c00902
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
As a high-& kappa; dielectric material,hafnium oxidehas excellentpotential for applications in the fields of both memristor and ferroelectricmaterials. It is now mostly believed that the ferroelectricity ofhafnium oxide films originates from the polar orthorhombic phase.The effect of this polar orthorhombic phase on the memristor propertiesof the hafnium oxide films is still uncertain. In this work, the proportionof the orthorhombic phase in the films was influenced by varying thepreparation parameters, and the microstructure was further determinedby microscopic characterization. High cooling rate favors the orthorhombicphase and more uniform microstructure, and the multiresistance stateand synaptic behavior of the HZO film was investigated, which showsthat the HZO film in the orthorhombic phase has good potential inmemristor applications.
引用
收藏
页码：4682 / 4689
页数：8
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