A Single-Inductor-Triple-Output Buck DC-DC Converter With Electromagnetic Gated Low Dropouts for Higher Resistance to Electromagnetic and Power Side-Channel Attacks With 3B Minimum Traces to Disclosure Improvement in Internet of Things Applications

被引：0

作者：

Hsu, Ya-Ting ^{[1
]}

Chung, Kai-Cheng ^{[1
]}

Ouyang, Yu-Jheng ^{[1
]}

Chen, Ke-Horng ^{[1
]}

Zheng, Kuo-Lin ^{[2
]}

Lin, Ying-Hsi ^{[3
]}

Lin, Shian-Ru ^{[3
]}

Tsai, Tsung-Yen ^{[3
]}

机构：

[1] Natl Yang Ming Chiao Tung Univ, Inst Elect & Comp Engn, Hsinchu 30010, Taiwan

[2] Chip GaN Power Semicond Corp, Hsinchu, Taiwan

[3] Realtek Semicond Corp, Hsinchu 300, Taiwan

来源：

IEEE SOLID-STATE CIRCUITS LETTERS | 2023年 / 6卷

关键词：

Advanced encryption standard (AES); digital low dropout voltage regulator (DLDO); electromagnetic interference (EMI); electromagnetic (EM)-leaked signature; hardware security; side-channel attack (SCA); true random number generator (TRNG);

D O I：

10.1109/LSSC.2023.3260952

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The security protection of the Internet of Things urges the design of low electromagnetic interference (EMI) and small power signature in power chips. To achieve high security, small chip area, and high efficiency, this letter proposes a single-inductor-triple-output (SITO) buck dc-dc converter with electromagnetic (EM) gated low dropouts (LDOs) to reduce the EM-leaked signature. Experimental results show that the peak value of EMI noise can be reduced from 88.44 to 54.92 dB mu V, complying with EN 55032 Class B specifications. In addition, it can achieve 3 billion (B) minimum traces to disclosure (MTD) under power side-channel attack, which is at least three times improvement compared to prior-arts.

引用

页码：89 / 92

页数：4