Deep reservoir computing based on self-rectifying memristor synapse for time series prediction

被引:9
|
作者
Wang, Rui [1 ]
Liang, Qi [2 ]
Wang, Saisai [2 ]
Cao, Yaxiong [2 ]
Ma, Xiaohua [1 ]
Wang, Hong [1 ]
Hao, Yue [1 ]
机构
[1] Xidian Univ, Sch Microelect, Key Lab Wide Bandgap Semicond Technol, Xian 710071, Peoples R China
[2] Xidian Univ, Sch Adv Mat & Nanotechnol, Xian 710071, Peoples R China
基金
中国国家自然科学基金;
关键词
CLASSIFICATION; ENERGY; SENSOR;
D O I
10.1063/5.0158076
中图分类号
O59 [应用物理学];
学科分类号
摘要
Herein, a self-rectifying resistive switching memristor synapse with a Ta/NbOx/Pt structure was demonstrated for deep reservoir computing (RC). The memristor demonstrated stable nonlinear analog switching characteristics, with a rectification ratio of up to 1.6 x 10(5), good endurance, and high uniformity. Additionally, the memristor exhibited typical short-term plasticity and dynamic synaptic characteristics. Based on these characteristics, a deep memristor RC system was proposed for time series prediction. The system achieved a low normalized root mean square error (NRMSE) of 0.04 in the time series prediction of the Henon map. Even at 90 degrees C, deep RC retains good predictive power with an NRMSE of only 0.07. This work provides guidance for efficient deep memristive RC networks to handle more complex future temporal tasks.
引用
收藏
页数:5
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