A Smart Measurement System for the Combined Nanoscale and Device Level Characterization of Electron Devices: Implementation Using Ink-Jet Printing Technologies

被引:0
|
作者
Claramunt, Sergi [1 ]
Arrese, Javier [2 ]
Ruiz, Ana [1 ]
Porti, Marc [1 ]
Cirera, Albert [2 ,3 ]
Nafria, Montserrat
机构
[1] Univ Autnoma Barcelona, Elect Engn Dept, Barcelona 08193, Spain
[2] Univ Barcelona, MIND, Elect & Biomed Engn Dept, Barcelona 08028, Spain
[3] Univ Barcelona, Inst Nanosci & Nanotechnol, Barcelona 08028, Spain
关键词
Nanoscale devices; Semiconductor device measurement; Stress measurement; Transistors; Current measurement; Biomedical measurement; Voltage measurement; Ink-jet printing; graphene transistor; electrical measurements; CAFM; HCI degradation; NANOMETER-SCALE; GRAPHENE; BREAKDOWN; DEGRADATION;
D O I
10.1109/TNANO.2023.3234357
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this article, the integration into a single measurement system of device level and nanoscale measurement equipment is presented and applied to the electrical characterization of emerging electron devices. This system is a smart solution to simplify the test procedure, since it allows a fast switching between measurement modes (device or nanoscale level), also featuring an enlarged testing capability. Key in the system is a custom-made inkjet-printed circuit board (I-PCB) that connects the device terminals to the proper instrumentation. The flexibility offered by inkjet-printing technologies is a clear advantage, since many kinds of devices can be tested, without the need of expensive hardware modifications. As a particular case of study, the proposed strategy is demonstrated by implementing a system that alternates between standard electrical measurements with a Semiconductor Parameter Analyzer (SPA) and Conductive Atomic Force Microscopy (CAFM) nanoscale measurements on back-gate graphene field-effect transistors.
引用
收藏
页码:28 / 35
页数:8
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