High-Performance Flexible Polymer Memristors Based on Silver Ions-Doped Polyethylenimine

被引：0

作者：

Wang, Saisai ^{[1
,2
]}

Xin, Yuhan ^{[1
,2
]}

Wang, Rui ^{[3
]}

Cao, Yaxiong ^{[1
,2
]}

Zhang, Wanlin ^{[3
]}

Zeng, Tonglong ^{[3
]}

Sun, Jing ^{[1
,2
]}

Ma, Xiaohua ^{[3
]}

Wang, Hong ^{[3
]}

Hao, Yue ^{[3
]}

机构：

[1] Xidian Univ, Hangzhou Inst Technol, Hangzhou 311231, Peoples R China

[2] Xidian Univ, Sch Adv Mat & Nanotechnol, State Key Lab Wide Bandgap Semicond Devices & Inte, Xian 710071, Peoples R China

[3] Xidian Univ, Sch Microelect, State Key Lab Wide Bandgap Semicond Devices & Inte, Xian 710071, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2024年 / 71卷 / 02期

关键词：

Conductive filaments (CFs); flexible elec-tronics; polyethylenimine (PEI); polymeric memristor; NANOPARTICLES; SYNAPSE;

D O I：

10.1109/TED.2023.3341927

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, we demonstrate a robust nonvolatile memristor based on polyethylenimine (PEI) with thermally stable resistive switching behaviors by doping silver ions. This polymeric memristor exhibits remarkable performances with excellent endurance, large ON/OFF ratio, long retention time, and low working voltage. More importantly, the device depicts superior high-temperature environmental stability even when exposed to temperatures up to 100 degrees C. Moreover, the mechanical properties and typical biosynapse functions of the W/Ag/PEI-AgNO3/Pt/Ti devices on flexible substrate are successfully realized. These results reveal that the W/Ag/PEI-AgNO3/Pt/Ti memristor is promising for wearable and neuromorphic electronics.

引用

页码：1203 / 1207

页数：5

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