Controlling barrier height and spectral responsivity of p-i-n based GeSn photodetectors via arsenic incorporation (vol 13, pg 9154, 2023)

被引：0

作者：

Nawwar, Mohamed A. ^{[1
]}

Abo Ghazala, Magdy S. ^{[1
]}

Sharaf El-Deen, Lobna M. ^{[1
]}

Anis, Badawi ^{[2
]}

El-Shaer, Abdelhamid ^{[3
]}

Elseman, Ahmed Mourtada ^{[4
]}

Rashad, Mohamed M. ^{[4
]}

Kashyout, Abd El-hady B. ^{[5
]}

机构：

[1] Menoufia Univ, Fac Sci, Phys Dept, Menoufia 32511, Shebin El Koom, Egypt

[2] Phys Res Inst, Natl Res Ctr, Spect Dept, 33 El Bohouth St, Giza 12622, Egypt

[3] Kafrelsheikh Univ, Fac Sci, Phys Dept, KafrelSheikh 33516, Egypt

[4] Cent Met Res & Dev Inst CMRDI, Adv Mat Inst, Elect & Magnet Mat Dept, Cairo 11421, Egypt

[5] City Sci Res & Technol Applicat SRTA City, Adv Technol & New Mat Res Inst, Elect Mat Dept, Alexandria 21943, Egypt

来源：

关键词：

D O I：

10.1039/d3ra90040a

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：14472 / 14472

页数：1

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