Loss-Induced Transparency Based ITO Monolithic Modulator in Integrated Photonics

被引:0
|
作者
Patil, Chandraman [1 ,2 ]
Dalir, Hamed [1 ,2 ]
Wang, Hao [1 ]
Sorger, Volker J. [1 ,2 ]
机构
[1] Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA
[2] Optelligence LLC, Upper Marlboro, MD 20772 USA
关键词
indium tin oxide; electro-optic modulator; photonic integrated circuit; ELECTROABSORPTION MODULATOR;
D O I
10.1109/IPC57732.2023.10360619
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Here, we present a 40 GHz bandwidth electro-optic modulator with CMOS compatibility. Utilizing critical coupling modulation through induced loss in Si-ITO layers, the modulator offers high-speed operation and is suitable for photonics integrated systems and computing applications.
引用
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页数:2
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