First principle insights and experimental investigations of the electronic and optical properties of CuInS2 single crystals

被引:15
|
作者
Giri, Ranjan Kr. [1 ]
Chaki, Sunil H. [1 ,2 ]
Dave, Mehul S. [3 ]
Bharucha, Shivani R. [3 ]
Khimani, Ankurkumar J. [4 ]
Kannaujiya, Rohitkumar M. [1 ]
Deshpande, Milind P. [1 ]
Solanki, Mitesh B. [5 ]
机构
[1] Sardar Patel Univ, PG Dept Phys, Vallabh Vidyanagar 388120, Gujarat, India
[2] Sardar Patel Univ, Dept Appl & Interdisciplinary Sci, CISST, Vallabh Vidyanagar 388120, Gujarat, India
[3] CVM Univ, Natubhai V Patel Coll Pure & Appl Sci, Dept Phys, Vallabh Vidyanagar 388120, Gujarat, India
[4] Shri AN Patel PG Inst Sci & Res, Dept Phys, Anand 388001, Gujarat, India
[5] Indian Inst Informat Technol, Dept Phys, Gandhinagar Campus, Vadodara 382028, Gujarat, India
来源
MATERIALS ADVANCES | 2023年 / 4卷 / 15期
关键词
GROWTH; GAP;
D O I
10.1039/d3ma00166k
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The function of the Perdew-Burke-Ernzerhof (PBE) approach is employed in density functional calculations to investigate copper indium disulfide (CuInS2) single crystals. The utilization of the generalized gradient approximation (GGA + U) method enhances the fluency and accuracy of the computation. This enabled the evaluation of band structure and density of states (DOS), including optical features like conductivity, reflectivity, refractive index, loss function, dielectric function, and absorption coefficient. The density of states (DOS) revealed that the valence bands at 0.8 eV are mostly a result of hybridisation between the In(5p) and S(3p) levels with slight input from Cu(3d). The CuInS2 single crystals are synthesised using a chemical vapour transport technique. Optical parameters such as optical density, skin depth, Urbach's parameters, refractive index, extinction coefficient, and dielectric constant are evaluated. The optical direct and indirect bandgap values are found as 1.60 eV and 1.51 eV, respectively. The band tailing or Urbach energy is calculated as 0.056 eV, allowing an accurate indirect bandgap of 1.454 eV to be predicted. The wavelength corresponding to the intersection of the real and imaginary dielectric functions is 819 nm, closer to the absorption band edge (797 nm).
引用
收藏
页码:3246 / 3256
页数:11
相关论文
共 50 条
  • [1] First Principle Study of Electronic, Optical and Thermoelectric Properties of CuInS2 and CuInSe2
    Laihnuna
    Pachuau, Z.
    INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 2023, 61 (01) : 108 - 114
  • [2] Investigations of CVT Grown CuInS2 Single Crystals
    Savchuk, V. A.
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2000, 39 (01) : 69 - 70
  • [3] Growth and properties of CuInS2 single crystals
    Bodnar, IV
    INORGANIC MATERIALS, 2000, 36 (02) : 108 - 110
  • [4] Growth and properties of CuInS2 single crystals
    I. V. Bodnar’
    Inorganic Materials, 2000, 36 : 108 - 110
  • [5] Radiative and photoelectric properties of CuInS2 single crystals
    Ivanov, VA
    Viktorov, IA
    Gremenok, VF
    TECHNICAL PHYSICS, 2002, 47 (09) : 1197 - 1198
  • [6] Radiative and photoelectric properties of CuInS2 single crystals
    V. A. Ivanov
    I. A. Viktorov
    V. F. Gremenok
    Technical Physics, 2002, 47 : 1197 - 1198
  • [7] Electrical and thermoelectric properties of CuInS2 single crystals
    Mobarak, A.
    Shaban, H. T.
    Elhady, A. F.
    MATERIALS CHEMISTRY AND PHYSICS, 2008, 109 (2-3) : 287 - 290
  • [8] Structural and optical properties of CuInS2 bulk crystals
    Angelov, M., 1600, American Inst of Physics, Woodbury, NY, United States (75):
  • [9] Influence of the growth method on the photoluminescence spectra and electronic properties of CuInS2 single crystals
    Mudryi, A. V.
    Yakushev, M. V.
    Volkov, V. A.
    Zhivulko, V. D.
    Borodavchenko, O. M.
    Martin, R. W.
    JOURNAL OF LUMINESCENCE, 2017, 186 : 123 - 126
  • [10] ESR AND OPTICAL STUDIES OF CUINS2 SINGLE-CRYSTALS
    NISHIKAWA, N
    AKSENOV, I
    SHINZATO, T
    SAKAMOTO, T
    SATO, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1995, 34 (8A): : L975 - L977