Loss of the Emission Power in LEDs

被引:0
|
作者
Gradoboev, A. V. [1 ]
Orlova, K. N. [2 ]
Zhamaldinov, F. F. [1 ]
机构
[1] Tomsk Natl Res Polytech Univ, Tomsk 634050, Russia
[2] Natl Res Nucl Univ MEPhI, Moscow 115409, Russia
关键词
DARK-LINE DEFECTS; DISLOCATIONS;
D O I
10.1134/S0020441222060112
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
-A classification of the radiation power losses of the LED active layer is proposed based on the analysis of the known literature data and the structure of structurally designed LEDs. Active and passive power losses are distinguished. Passive radiation power losses do not affect changes in the quantum yield of the active (working) layer of an LED and/or the forward branch of the volt-ampere characteristic, but they can be detected as anomalies in the LED lighting characteristics. A method for determining the passive power losses of radiation from the active layer of LEDs is proposed. Using the example of IR LEDs fabricated on the basis of AlGaAs heterostructures, the effectiveness of controlling passive losses of the LED emission power in the study of their operational properties is shown.
引用
收藏
页码:73 / 79
页数:7
相关论文
共 50 条
  • [31] Effects of surface texture on the light emission of red LEDs
    Song, Xiaowei
    Li, Jianjun
    Han, Jun
    Deng, Jun
    Chen, Yixin
    Sun, Hao
    Jiang, Wenjing
    Shen, Guangdi
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2008, 29 (07): : 1365 - 1368
  • [32] Color Preference under LEDs with Diminished Yellow Emission
    Wei, Minchen
    Houser, Kevin W.
    Allen, Gary R.
    Beers, William W.
    LEUKOS, 2014, 10 (03) : 119 - 131
  • [33] Emission efficiency in InAs leds controlled by surface recombination
    Kane, MJ
    Braithwaite, G
    Emeny, MT
    Lee, D
    Martin, T
    Wight, DR
    INFRARED APPLICATIONS OF SEMICONDUCTORS - MATERIALS, PROCESSING AND DEVICES, 1997, 450 : 129 - 134
  • [34] The effect of dislocation loops on the light emission of silicon LEDs
    Hoang, T
    Leminh, P
    Holleman, J
    Schmitz, J
    IEEE ELECTRON DEVICE LETTERS, 2006, 27 (02) : 105 - 107
  • [35] The effect of dislocation loops on the light emission of silicon LEDs
    Hoang, T
    LeMinh, P
    Holleman, J
    Schmitz, J
    PROCEEDINGS OF ESSDERC 2005: 35TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2005, : 359 - 362
  • [36] Impact of VLC on Light Emission Quality of White LEDs
    Popoola, Wasiu O.
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 2016, 34 (10) : 2526 - 2532
  • [37] Estimation of Electric Arc Power Loss using Net Emission Coefficient of Argon
    Senk, Josef
    Laznickova, Ilona
    Jakubova, Ivana
    PROCEEDINGS OF THE 2018 19TH INTERNATIONAL SCIENTIFIC CONFERENCE ON ELECTRIC POWER ENGINEERING (EPE), 2018,
  • [38] Increasing the emission power of LEDs (λ=1.7-2.4 μm) by changing the light direction in the GaSb/GaInAsSb/GaAlAsSb heterostructure
    Zolotukhin, A. V.
    Sherstnev, V. V.
    Savelieva, K. S.
    Grebenshchikova, E. A.
    Serebrennikova, O. Yu.
    Ilinskaya, N. D.
    Slobozhanuk, S. A.
    Ivanov, E. V.
    Yakovlev, Y. P.
    15TH RUSSIAN YOUTH CONFERENCE ON PHYSICS AND ASTRONOMY (PHYSICA.SPB), 2013, 461
  • [39] Variation of thermal resistance with input power in LEDs
    Yang, Lianqiao
    Hu, Jianzheng
    Kim, Lan
    Shin, Moo Whan
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 2006, 3 (06): : 2187 - 2190
  • [40] A SWITCHED-CAPACITOR DRIVER FOR POWER LEDS
    Miranda, Pedro H. A.
    Sa, Edilson Mineiro, Jr.
    de Oliveira, Antonio V. L.
    dos Santos F, Esio E.
    Antunes, Fernando L. M.
    XI BRAZILIAN POWER ELECTRONICS CONFERENCE (COBEP 2011), 2011, : 918 - 923