Syntheses of η1-Alkyl-η3-Allyl-η5-Cyclopentadienyl Cobalt(III) Complexes and Their Use in Low-temperature Atomic Layer Deposition of Cobalt-Containing Thin Films

被引：6

作者：

Lu, Ke ^{[1
]}

Zhu, Jiahao ^{[1
]}

Wang, Jialiang ^{[1
]}

Wa, Qingbo ^{[1
]}

Guo, Zheng ^{[1
]}

Xiong, Wei ^{[1
]}

Gao, Yuan ^{[3
]}

Lei, Renbo ^{[1
]}

Cheng, Bichu ^{[2
]}

Wang, Xinwei ^{[1
]}

机构：

[1] Peking Univ, Sch Adv Mat, Shenzhen Grad Sch, Shenzhen 518055, Peoples R China

[2] Harbin Inst Technol, Sch Sci, Shenzhen 518055, Peoples R China

[3] Peking Univ, Sch Phys, State Key Lab Nucl Phys & Technol, Beijing 100871, Peoples R China

来源：

CHEMISTRY-A EUROPEAN JOURNAL | 2023年 / 29卷 / 16期

关键词：

atomic layer deposition; C-C bond activation; cobalt; pinene; metal-organic complexes; PRECURSORS; OXYGEN; CO3O4;

D O I：

10.1002/chem.202203656

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Herein, we report the design and scalable synthesis of three new Co(III) complexes, which have an unusual hydrocarbon eta(1)-alkyl-eta(3)-allyl-eta(5)-cyclopentadienyl ligation structure, from the reactions of readily available cobalt(II) compound CoCl2(PPh3)(2) and biomass material beta-pinene via C-C bond activation. These Co(III) complexes are air-stable, fairly volatile, and thermally stable, so they are excellent candidates as the metal precursors for the vapor deposition of cobalt-containing thin films. As a demonstration, we show that the Co(III) complex of [(3'-5'-eta,1-sigma)-methylene(2,2,4-trimethyl-4-cyclohexene-1,3-diyl)](eta(5)-methylcyclopentadienyl)Co (i. e. (seco-pinene)(MeCp)Co) is well suited for the atomic layer deposition (ALD) of Co3O4 and CoS2 thin films, and the deposited Co3O4 and CoS2 films are able to conformally cover trench structures with a fairly high aspect ratio of 10 : 1.

引用

页数：8