Theoretical Enhancement of the Goos-Hanchen Shift with a Metasurface Based on Bound States in the Continuum

被引:4
|
作者
Jiang, Xiaowei [1 ,2 ]
Fang, Bin [1 ]
Zhan, Chunlian [1 ]
机构
[1] China Jiliang Univ, Coll Opt & Elect Technol, Hangzhou 310018, Peoples R China
[2] Quzhou Coll Technol, Coll Informat Engn, Quzhou 324000, Peoples R China
基金
中国国家自然科学基金;
关键词
Goos-Hanchen shift; bound states in the continuum; metasurface; reflectivity; DIELECTRIC NANOHOLE ARRAYS; SURFACE-PLASMON; RESONANCES; FANO;
D O I
10.3390/mi14061109
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
The enhancement of the Goos-Hanchen (GH) shift has become a research hotspot due to its promoted application of the GH effect in various fields. However, currently, the maximum GH shift is located at the reflectance dip, making it difficult to detect GH shift signals in practical applications. This paper proposes a new metasurface to achieve reflection-type bound states in the continuum (BIC). The GH shift can be significantly enhanced by the quasi-BIC with a high quality factor. The maximum GH shift can reach more than 400 times the resonant wavelength, and the maximum GH shift is located exactly at the reflection peak with unity reflectance, which can be applied to detect the GH shift signal. Finally, the metasurface is used to detect the variation in the refractive index, and the sensitivity can reach 3.58 x 10(6) & mu;m/RIU (refractive index unit) according to the simulation's calculations. The findings provide a theoretical basis to prepare a metasurface with high refractive index sensitivity, a large GH shift, and high reflection.
引用
收藏
页数:14
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