One-pot synthesis of Ag-In-Ga-S nanocrystals embedded in a Ga2O3 matrix and enhancement of band-edge emission by Na+ doping

被引：3
|
作者：
Tozawa, Makoto [1 ]
Miyamae, Chie [1 ]
Akiyoshi, Kazutaka [1 ]
Kameyama, Tatsuya [1 ]
Yamamoto, Takahisa [1 ]
Motomura, Genichi [2 ,3 ]
Fujisaki, Yoshihide [2 ]
Uematsu, Taro [3 ,4 ]
Kuwabata, Susumu [3 ,4 ]
Torimoto, Tsukasa [1 ]
机构：
[1] Nagoya Univ, Grad Sch Engn, Chikusa Ku, Nagoya 4648603, Japan
[2] Japan Broadcasting Corp NHK, Sci & Technol Res Labs, 1-10-11 Kinuta,Setagaya Ku, Tokyo 1578510, Japan
[3] Osaka Univ, Grad Sch Engn, Dept Appl Chem, Suita, Osaka 5650871, Japan
[4] Osaka Univ, Inst Open & Transdisciplinary Res Initiat ICS OTRI, Innovat Catalysis Sci Div, Suita, Osaka 5650871, Japan
来源：
NANOSCALE ADVANCES | 2023年 / 5卷 / 24期
基金：
日本学术振兴会;
关键词：
LIGHT-EMITTING-DIODES; QUANTUM DOTS; SEMICONDUCTOR NANOCRYSTALS; GREEN ELECTROLUMINESCENCE; FACILE SYNTHESIS; PHOTOLUMINESCENCE; DEVICES; NANOPARTICLES; LUMINESCENCE; I-III-VI2;
D O I：
10.1039/d3na00755c
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
I-III-VI-based semiconductor quantum dots (QDs) have been intensively explored because of their unique controllable optoelectronic properties. Here we report one-pot synthesis of Na-doped Ag-In-Ga-S (AIGS) QDs incorporated in a Ga2O3 matrix. The obtained QDs showed a sharp band-edge photoluminescence peak at 557 nm without a broad-defect site emission. The PL quantum yield (QY) of such QDs was 58%, being much higher than that of AIGS QDs without Na+ doping, 29%. The obtained Na-doped AIGS/Ga2O3 composite particles were used as an emitting layer of green QD light-emitted diodes. A sharp electroluminescence (EL) peak was observed at 563 nm, being similar to that in the PL spectrum of the QDs used. The external quantum efficiency of the device was 0.6%.
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收藏
页码：7057 / 7066
页数：10
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