Electric-double-layer-gated 2D transistors for bioinspired sensors and neuromorphic devices

被引:3
|
作者
Lin, Xiangde [1 ,2 ]
Li, Yonghai [2 ,3 ]
Lei, Yanqiang [1 ,2 ,4 ]
Sun, Qijun [2 ,3 ,5 ]
机构
[1] Shanghai Univ Med & Hlth Sci, Dept Res, Zhoupu Hosp, Shanghai, Peoples R China
[2] Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Beijing, Peoples R China
[3] Guangxi Univ, Ctr Nanoenergy Res, Sch Chem & Chem Engn, Nanning, Peoples R China
[4] Shanghai Univ Med & Hlth Sci, Dept Res, Zhoupu Hosp, Shanghai 201318, Peoples R China
[5] Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Beijing 101400, Peoples R China
基金
中国国家自然科学基金;
关键词
Electrical double layer; transistors; 2D materials; sensors; applications; ORGANIC PHOTODIODES; IONIC LIQUID; GEL; TECHNOLOGY; PROGRESS;
D O I
10.1080/19475411.2024.2306837
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Electric double layer (EDL) gating is a technique in which ions in an electrolyte modulate the charge transport in an electronic material through electrical field effects. A sub-nanogap capacitor is induced at the interface of electrolyte/semiconductor under the external electrical field and the capacitor has an ultrahigh capacitance density (similar to mu F cm(-2)). Recently, EDL gating technique, as an interfacial gating, is widely used in two-dimensional (2D) crystals for various sophisticated materials characterization and device applications. This review introduces the EDL-gated transistors based on 2D materials and their applications in the field of bioinspired optoelectronic detection, sensing, logic circuits, and neuromorphic computation. [GRAPHICS] .
引用
收藏
页码:238 / 259
页数:22
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