Silicon flower structures by maskless plasma etching

被引:0
|
作者
Zhao, Geng [1 ,2 ,3 ]
Zhao, Xiaoyan [4 ]
Zhang, Haimiao [4 ]
Lian, Ziwei [5 ]
Zhao, Yongmin [5 ]
Ming, Anjie [5 ]
Lin, Yuanwei [4 ]
机构
[1] Datong Univ, Inst Solid State Phys, Coll Phys & Elect Sci, Shanxi Prov Key Lab Microstruct Electromagnet Func, Datong 037054, Shanxi, Peoples R China
[2] Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China
[3] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Lab Micronano Optoelect Mat & Devices, Key Lab Mat High Power Laser, Shanghai 201800, Peoples R China
[4] NAURA Technol Grp Co Ltd, Dept Semicond Etching, Beijing 100176, Peoples R China
[5] Gen Res Inst Nonferrous Met, State Key Lab Adv Mat Smart Sensing, Beijing 101402, Peoples R China
基金
中国国家自然科学基金;
关键词
Silicon flower microstructures; Black silicon; Maskless plasma etching; Fluorocarbon gas; Infra -Red absorption; SOLAR-CELLS; BLACK;
D O I
10.1016/j.heliyon.2023.e22792
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Silicon nano/microstructures are widely utilized in the semiconductor industry, and plasma etching is the most prominent method for fabricating silicon nano/microstructures. Among the variety of silicon nano/microstructures, black silicon with light-trapping properties has garnered broad interest from both the scientific and industrial communities. However, the fabrication mechanism of black silicon remains unclear, and the light absorption of black silicon only focuses on the near-infrared region thus far. Herein, we demonstrate that black silicon can be fabricated from individual flower-like silicon microstructures. Using fluorocarbon gases as etchants, silicon flower microstructures have been formed via maskless plasma etching. Black silicon forming from silicon flower microstructures exhibits strong absorption with wavelength from 0.25 mu m to 20 mu m. The result provides novel insight into the understanding of the plasma etching mechanism in addition to offering further significant practical applications for device manufacturing.
引用
收藏
页数:9
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