Critical Field and Specific Heat in Electron- and Hole-Doped Graphene Superconductors

被引:0
|
作者
Drzazga-Szczesniak, E. A. [1 ]
Kaczmarek, A. Z. [2 ]
机构
[1] Czestochowa Tech Univ, Dept Phys, Fac Prod Engn & Mat Technol, 19 Armii Krajowej Ave, PL-42200 Czestochowa, Poland
[2] Jan Dlugosz Univ Czestochowa, Dept Theoret Phys, Fac Sci & Technol, 13-15 Armii Krajowej Ave, PL-42200 Czestochowa, Poland
关键词
Eliashberg formalism; critical field; specific heat; superconductivity; PHONON-MEDIATED SUPERCONDUCTIVITY;
D O I
10.12693/APhysPolA.143.148
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Doping is one of the most prominent techniques to alter the properties of a given material. Herein, the influence of the electron- and hole-doping on the selected superconducting properties of graphene are considered. In detail, the Migdal-Eliashberg formalism is employed to analyze the specific heat and the critical magnetic field in the representative cases of graphene doped with nitrogen or boron. It is found that electron doping is much more favorable in terms of enhancing the aforementioned properties than its hole counterpart. These findings are appropriately summarized by means of the dimensionless thermodynamic ratios, familiar in the Bardeen-Cooper-Schrieffer theory. To this end, the perspectives for future research on superconductivity in graphene are drawn.
引用
收藏
页码:148 / 152
页数:5
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