Fully Printed Electrolyte-Gated Transistor Formed in a 3D Polymer Reservoir with Laser Printed Drain/Source Electrodes (Adv. Mater. Technol. 22/2023)

被引：0

作者：

Marques, Gabriel Cadilha ^{[1
]}

Yang, Liang ^{[1
,2
,4
]}

Liu, Yan ^{[1
]}

Wollersen, Vanessa ^{[1
,3
]}

Scherer, Torsten ^{[1
,3
]}

Breitung, Ben ^{[1
]}

Wegener, Martin ^{[1
,2
]}

Aghassi-Hagmann, Jasmin ^{[1
]}

机构：

[1] Karlsruhe Inst Technol, Inst Nanotechnol, Herman von Helmholtz Pl 1, D-76344 Eggenstein Leopoldshafen, Germany

[2] KIT, Inst Appl Phys APH, Wolfgang Gade Str 1, D-76128 Karlsruhe, Germany

[3] Eggenstein Leopoldshafen Res Ctr, Karlsruhe Micro Nano Facil KMNFi, Wolfgang Gade Str 2, D-76344 Eggenstein Leopoldshafen, Germany

[4] Univ Sci & Technol China, Suzhou Inst Adv Res, Suzhou 215127, Peoples R China

来源：

ADVANCED MATERIALS TECHNOLOGIES | 2023年 / 8卷 / 22期

关键词：

3D polymer reservoirs; electrolyte-gated field-effect transistors; fully printed transistors; inkjet printing; laser printing; multi-photon polymerization; oxide electronics;

D O I：

10.1002/admt.202370121

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In solution processed electronic devices it is crucial that the deposited inks are properly aligned and that all post-processing steps are compliant with each other. Moreover, shorter channel lengths are highly beneficial to increase the device performance. Herein, laser printing of metals and polymer reservoirs allows to print sub-micrometer sized channel lengths while confining functional inks into these small gaps. Therefore, a manufacturing concept and optimized material stack, suitable for combined inkjet and laser printing are proposed. A nanoparticulate indium oxide (In2O3) semiconductor is inkjet printed into and constrained by a 3D laser written polymer (pentaerythritol triacrylate, PETA) reservoir. Inside the 3D printed polymer reservoir, platinum (Pt) electrodes, that are further routed over the reservoir walls, are laser printed by a metal reduction process. The transistor fabrication is completed by a second inkjet printed layer of composite solid polymer electrolyte and an organic top-gate layer (PEDOT:PSS). This concept does not exceed annealing temperatures higher than 100 °C, and is compatible with a range of substrates. The characterized electrolyte-gated field-effect transistor show a reasonable on/off-ratio in the range of 104 with negligible leakage currents. This materials and hybrid device manufacturing scheme has believed great potential for bioelectronics, lab-on-a-chip applications and others. © 2023 The Authors. Advanced Materials Technologies published by Wiley-VCH GmbH.

引用

页数：1