Impact of material and tunnel barrier quality on spin transport in a CVD graphene non-local spin valve device array

Wafer-scale graphene films produced via chemical vapor deposition (CVD) are now commercially available, however these films inherently contain randomly distributed defects such as adlayers and grain boundaries. This report discusses the impact of these defects on the signal integrity of an array of graphene-based non-local spin valves (NLSVs). It was found that critical spin parameters fluctuate drastically between adjacent identical devices. Investigation of the channel quality indicated that adlayers do not affect spin signal significantly even when located directly in the spin transport region of the device. In contrast, grain boundary defects within the spin transport region have significant impact on spin signal. Poor tunnel barrier integrity due to residue from the fabrication process also remains a dominant factor driving device variability.