Effects of gases on the field emission performance of silicon gated field emitter array

被引:2
|
作者
Bhattacharya, Ranajoy [1 ]
Cannon, Mason [1 ]
Rughoobur, Girish [2 ]
Karaulac, Nedeljko [2 ]
Chern, Winston [2 ]
Farsad Asadi, Reza [3 ]
Tao, Zheng [3 ]
Gnade, Bruce E. [3 ]
Akinwande, Akintunde Ibitayo [2 ]
Browning, Jim [1 ]
机构
[1] Boise State Univ, Dept Elect & Comp Engn, 1375 Univ Dr, Boise, ID 83725 USA
[2] MIT, Dept Elect Engn & Comp Sci, 77 Massachusetts Ave, Cambridge, MA 02139 USA
[3] Southern Methodist Univ, Dept Mech Engn, Dallas, TX 75205 USA
来源
关键词
ELECTRON-EMISSION; CURRENT LIMITERS; FABRICATION; CATHODES;
D O I
10.1116/6.0002789
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Effects of gases on field emission performance were measured using silicon-gated field emitter arrays. Gas was injected into a vacuum chamber with a 1000 x 1000 tip array, which was driven by a DC gate and collector voltages. The collector voltage was fixed at 200 V while the gate voltage was swept to 40 V. For the gas exposure study, N-2, He, and Ar were used. The sets of partial pressures, 5 x 10(-6), 5x10(-5), and 5 x 10(-4) Torr, were used for the experiment. It was observed that N-2 had the least effect and Ar had the worst effect on emission current performance. The degradation of collector current at 5 x 10(-4) Torr pressure for Ar was approximate to 65% where for the N-2, at the same level of pressure, the degradation was approximate to 41%. However, further experiments with high purity Ar gas showed that it was the water vapor present in the gas itself that was the primary cause of reduction in emission current and not the gas itself. The results expressed in reduction in emission current versus Langmuir exposure versus the current clearly showed the effect of water vapor. After the vacuum was recovered, the work function again restored partially to its original value. After ultraviolet light cleaning, the emission current was restored completely to the original state.
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页数:7
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