In situ Post Etch Treatment on Ge-rich GST after etching in HBr-based plasma

被引：0

作者：

Boixaderas, C. ^{[1
]}

Canvel, Y. ^{[2
]}

Fontaine, B. ^{[2
]}

Lagrasta, S. ^{[2
]}

Dubois, J. ^{[2
]}

Gouraud, P. ^{[2
]}

Posseme, N. ^{[1
]}

Martinez, E. ^{[3
]}

机构：

[1] Univ Grenoble Alpes, Patterning Serv, CEA, Leti, F-38000 Grenoble, France

[2] STMicroelect, R&D Dept, Crolles, France

[3] Univ Grenoble Alpes, Characterizat Dept, CEA, Leti, F-38000 Grenoble, France

来源：

2023 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, IITC AND IEEE MATERIALS FOR ADVANCED METALLIZATION CONFERENCE, MAM, IITC/MAM | 2023年

关键词：

PCRAM; plasma etching; GST; defectivity; In Situ Post Etch Treatment;

D O I：

10.1109/IITC/MAM57687.2023.10154885

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

After patterning of Phase Change Memory (PCM) stack, residues are growing after etching and air exposure. This kind of defect might lead to severe impacts on the devices performances and reliability. In this work, we study the modification of the Ge-GST surface after HBr-based plasma etching and air exposure. We evaluated the CH4-based in situ post etch plasma treatments as a solution to protect Ge-GST and prevent the formation of residues.

引用

页数：3

共 24 条

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