Technological Evolution of Image Sensing Designed by Nanostructured Materials

被引:23
|
作者
Iqbal, Muhammad Aamir
Malik, Maria
Le, Top Khac
Anwar, Nadia
Bakhsh, Sunila
Shahid, Wajeehah
Shahid, Samiah
Irfan, Shaheen
Al-Bahrani, Mohammed
Morsy, Kareem
Do, Huy-Binh
Ponnusamy, Vinoth Kumar
Pham, Phuong V.
机构
[1] School of Materials Science and Engineering, Zhejiang University, Hangzhou
[2] Department of Medicinal and Applied Chemistry, Kaohsiung Medical University (KMU), Kaohsiung City
[3] Research Center for Precision Environmental Medicine, Kaohsiung Medical University (KMU), Kaohsiung City
[4] Department of Medical Research, Kaohsiung Medical University Hospital (KMUH), Kaohsiung City
[5] Department of Physics, College of Science, National Sun Yat-Sen University, Kaohsiung
[6] Centre of Excellence in Solid State Physics, University of the Punjab, Lahore
[7] Faculty of Materials Science and Technology, University of Science, Ho Chi Minh City
[8] Vietnam National University, Ho Chi Minh City
[9] School of Materials Science and Engineering, Tsinghua University, Beijing
[10] Department of Physics, The University of Lahore, Lahore
[11] Department of Physics, Balochistan University of Information Technology, Engineering and Management Sciences, Quetta
[12] Institute of Molecular Biology and Biotechnology, The University of Lahore, Lahore
[13] Chemical Engineering and Petroleum Industries Department, Al-Mustaqbal University College, Babylon
[14] Biology Department, College of Science, King Khalid University, Abha
[15] Faculty of Applied Science, Ho Chi Minh City University of Technology and Education, Thu Duc City
[16] Department of Chemistry, National Sun Yat-sen University, Kaohsiung
来源
ACS MATERIALS LETTERS | 2023年 / 5卷 / 04期
关键词
CHARGE-COUPLED-DEVICES; QUANTUM DOTS; INTRINSIC SILICON; SENSOR; NANOCRYSTALS; CCD; PHOTODETECTORS; PHOTODIODE; LENSES; FILTER;
D O I
10.1021/acsmaterialslett.2c01011
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Imaging sensing holds a remarkable place in modern electronics and optoelectronics for the complementary metal-oxide-semiconductor integration of high-speed optical communications and photodetection with the merits of high-speed operation, cost-effectiveness, and noncomplex fabrication. The optimum quality of image sensing relies on noise, sensitivity, power consumption, voltage operation, and speed imaging to access and compete with the state-of-the-art image sensing devices in the industry. Many studies have been conducted to address these issues; however, performance has not yet been optimized and solutions are still in the works. In this review, we briefly provide information on recent advances in image sensing using nanostructured emerging materials through nanofabrication integration including the technology evolution on traditional and modern technology platforms, general mechanisms, classification, and actual applications as well as existing limitations. Finally, new challenges and perspectives for the future trends of image sensing and their possible solutions are also discussed.
引用
收藏
页码:1027 / 1060
页数:34
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