Interlayer hybridization in a van der Waals quantum spin-Hall insulator/superconductor heterostructure

被引:0
|
作者
Bussolotti, Fabio [1 ]
Kawai, Hiroyo [2 ]
Verzhbitskiy, Ivan [1 ]
Tao, Wei [3 ]
Ho, Duc-Quan [3 ]
Das, Anirban [4 ]
Jia, Junxiang [3 ]
Mukherjee, Shantanu [4 ]
Weber, Bent [3 ]
Goh, Kuan Eng Johnson [1 ,3 ,5 ]
机构
[1] ASTAR, Inst Mat Res & Engn, 2 Fusionopolis Way,08-03 Innovis, Singapore 138634, Singapore
[2] Agcy Sci Technol & Res, Inst High Performance Comp, 1 Fusionopolis Way,16-16 Connexis, Singapore 138632, Singapore
[3] Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, 50 Nanyang Ave, Singapore 639798, Singapore
[4] Indian Inst Technol Madras, Dept Phys, Chennai 600036, India
[5] Natl Univ Singapore, Dept Phys, 2 Sci Dr 3, Singapore 117551, Singapore
基金
新加坡国家研究基金会;
关键词
D O I
10.1063/5.0130393
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this work, we present an angle-resolved photoemission spectroscopy study of a 1T ' -WTe2 monolayer epitaxially grown on NbSe2 substrates, a prototypical quantum spin Hall insulator (QSHI)/superconductor heterojunction. Angle-resolved photoemission spectroscopy data indicate the formation of electronic states in the bulk bandgap of WTe2, which are absent in the nearly free-standing WTe2 grown on the highly oriented pyrolytic graphite substrate, where an energy gap of similar to 100 meV is reported. The results are explained in terms of hybridization effects promoted by the QSHI-superconductor interaction at WTe2/NbSe2 interfaces, in line with recent scanning probe microscopy investigation and theoretical band structure calculations. Our findings highlight the important role of interlayer interaction on the electronic properties and ultimately on the engineering of topological properties of the QSHI/superconducting heterostructure.
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页数:6
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