SHADOW: Preventing Row Hammer in DRAM with Intra-Subarray Row Shuffling

被引:14
|
作者
Wi, Minbok [1 ]
Park, Jaehyun [1 ]
Ko, Seoyoung [1 ]
Kim, Michael Jaemin [1 ]
Kim, Nam Sung [2 ]
Lee, Eojin [3 ]
Ahn, Jung Ho [1 ]
机构
[1] Seoul Natl Univ, Seoul, South Korea
[2] Univ Illinois, Champaign, IL USA
[3] Inha Univ, Incheon, South Korea
基金
新加坡国家研究基金会;
关键词
ROWHAMMER; MEMORY; BITS;
D O I
10.1109/HPCA56546.2023.10070966
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
As Row Hammer (RH) attacks have been a critical threat to computer systems, numerous hardware-based (HW-based) RH mitigation strategies have been proposed. However, the advent of non-adjacent RH attacks and lower RH thresholds significantly increase the area and performance overhead of these prior solutions due to their conservative design characteristics. We propose a new in-DRAM RH protection solution named Shuffling Aggressor DRAM Rows (SHADOW). SHADOW dynamically randomizes DRAM row mapping information, preventing an attacker from targeting a specific victim row that may hold critical data. SHADOW is robust against non-adjacent RH attacks because it utilizes the in-DRAM row-shuffle technique. To realize the in-DRAM row-shuffle operation with low performance and energy overhead, we use a novel DRAM microarchitecture optimization technique. We also utilize the recently introduced JEDEC RFM interface to enable in-DRAM RH mitigation without any DRAM interface changes. By exploiting an additional DRAM row per subarray, SHADOW does not require costly SRAM- or CAM-based tracking structures other than intrinsic counters for the RFM interface. We demonstrate the strong probabilistic protection of SHADOW against RH attacks through adversarial pattern analysis and highlight the compelling performance, area, and energy overheads compared to those of state-of-the-art HW-based RH prevention solutions.
引用
收藏
页码:333 / 346
页数:14
相关论文
共 18 条
  • [1] Trap-Assisted DRAM Row Hammer Effect
    Yang, Thomas
    Lin, Xi-Wei
    IEEE ELECTRON DEVICE LETTERS, 2019, 40 (03) : 391 - 394
  • [2] Mitigating Row Hammer Attacks Based on Dummy Cells in DRAM
    Amaya, Andres
    Gomez, Hector
    Roa, Elkim
    2017 IEEE INTERNATIONAL CONFERENCE ON CONSUMER ELECTRONICS (ICCE), 2017,
  • [3] DRAM Row-Hammer Attack Reduction Using Dummy Cells
    Gomez, Hector
    Amaya, Andres
    Roa, Elkim
    2016 2ND IEEE NORDIC CIRCUITS AND SYSTEMS CONFERENCE (NORCAS), 2016,
  • [4] Mithril: Cooperative Row Hammer Protection on Commodity DRAM Leveraging Managed Refresh
    Kim, Michael Jaemin
    Park, Jaehyun
    Park, Yeonhong
    Doh, Wanju
    Kim, Namhoon
    Ham, Tae Jun
    Lee, Jae W.
    Ahn, Jung Ho
    2022 IEEE INTERNATIONAL SYMPOSIUM ON HIGH-PERFORMANCE COMPUTER ARCHITECTURE (HPCA 2022), 2022, : 1156 - 1169
  • [5] NoHammer: Preventing Row Hammer With Last-Level Cache Management
    Lee, Seunghak
    Kang, Ki-Dong
    Park, Gyeongseo
    Kim, Nam Sung
    Kim, Daehoon
    IEEE COMPUTER ARCHITECTURE LETTERS, 2023, 22 (02) : 157 - 160
  • [6] How to Kill the Second Bird with One ECC: The Pursuit of Row Hammer Resilient DRAM
    Kim, Michael Jaemin
    Wi, Minbok
    Park, Jaehyun
    Ko, Seoyoung
    Choi, Jaeyoung
    Nam, Hwayong
    Kim, Nam Sung
    Ahn, Jung Ho
    Lee, Eojin
    56TH IEEE/ACM INTERNATIONAL SYMPOSIUM ON MICROARCHITECTURE, MICRO 2023, 2023, : 986 - 1001
  • [7] Analysis of Row Hammer and Passing Gate Effect in DRAM Cells by BCAT Structural Design
    Im, Jisung
    Kim, Hansol
    Kim, Jinsu
    Woo, Seungmin
    Kwon, Taeseong
    Yoon, Young Jun
    Bae, Jong-Ho
    Woo, Sung Yun
    2024 IEEE SILICON NANOELECTRONICS WORKSHOP, SNW 2024, 2024, : 91 - 92
  • [8] Design Strategies for BCAT Structures: Enhancing DRAM Reliability and Mitigating Row Hammer Effect
    Im, Jisung
    Kim, Hansol
    Kim, Hyungjin
    Woo, Sung Yun
    ELECTRONICS, 2025, 14 (03):
  • [9] A Case for Amplifying Row Hammer Attacks via Cell-Coupling in DRAM Devices
    Goswami, Kaustav
    Das, Shirshendu
    Satapathy, Sagar
    Banerjee, Dip Sankar
    PROCEEDINGS OF THE INTERNATIONAL SYMPOSIUM ON MEMORY SYSTEMS, MEMSYS 2022, 2022,
  • [10] Investigation of Row Hammer and Passing Gate Effects Based on the Work Functions of Dual Gates in DRAM Cells
    Kim, Hansol
    Im, Jisung
    Kim, Jinsu
    Woo, Seungmin
    Kwon, Taeseong
    Yoon, Young Jun
    Bae, Jong-Ho
    Woo, Sung Yun
    2024 IEEE SILICON NANOELECTRONICS WORKSHOP, SNW 2024, 2024, : 89 - 90