Magnetic-Proximity-Induced Efficient Charge-to-Spin Conversion in Large-Area PtSe2/Ni80Fe20 Heterostructures

被引:4
|
作者
Mudgal, Richa [1 ]
Jakhar, Alka [2 ]
Gupta, Pankhuri [1 ]
Yadav, Ram Singh [1 ]
Biswal, Bubunu [3 ,4 ]
Sahu, Pratik [3 ,5 ]
Bangar, Himanshu [1 ]
Kumar, Akash [1 ,6 ]
Chowdhury, Niru [1 ]
Satpati, Biswarup [7 ]
Kumar Nanda, Birabar Ranjit [3 ,4 ]
Satpathy, Sashi [3 ,4 ,5 ]
Das, Samaresh [2 ]
Muduli, Pranaba Kishor [1 ]
机构
[1] Indian Inst Technol Delhi, Dept Phys, New Delhi 110016, India
[2] Indian Inst Technol Delhi, Ctr Appl Res Elect, New Delhi 110016, India
[3] Indian Inst Technol Madras, Dept Phys, Condensed Matter Theory & Computat Lab, Chennai 600036, India
[4] Indian Inst Technol Madras, Ctr Atomist Modelling & Mat Design, Chennai 600036, India
[5] Univ Missouri, Dept Phys & Astron, Columbia, MO 65211 USA
[6] Univ Gothenburg, Dept Phys, S-41296 Gothenburg, Sweden
[7] Saha Inst Nucl Phys, CI Homi Bhabha Natl Inst, Surface Phys & Mat Sci Div, Kolkata 700064, India
关键词
PtSe2; spin-orbit torque; spin-torque ferromagnetic resonance; magnetic proximity; TRANSITION-METAL DICHALCOGENIDES; ORBIT TORQUES; SURFACE-STATES; INTERFACE; PTSE2; HALL;
D O I
10.1021/acs.nanolett.3c04060
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
As a topological Dirac semimetal with controllable spin-orbit coupling and conductivity, PtSe2, a transition-metal dichalcogenide, is a promising material for several applications, from optoelectrics to sensors. However, its potential for spintronics applications has yet to be explored. In this work, we demonstrate that the PtSe2/Ni80Fe20 heterostructure can generate large damping-like current-induced spin-orbit torques (SOT), despite the absence of spin-splitting in bulk PtSe2. The efficiency of charge-to-spin conversion is found to be -0.1 +/- 0.02 nm(-1) in PtSe2/Ni80Fe20, which is 3 times that of the control sample, Ni80Fe20/Pt. Our band structure calculations show that the SOT due to PtSe2 arises from an unexpectedly large spin splitting in the interfacial region of PtSe2 introduced by the proximity magnetic field of the Ni80Fe20 layer. Our results open up the possibilities of using large-area PtSe2 for energy-efficient nanoscale devices by utilizing proximity-induced SOT.
引用
收藏
页码:11925 / 11931
页数:7
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