Annealing effect on cds nanowalls grown by chemical bath deposition on glass substrate

被引:1
|
作者
Yildirim, E. [1 ]
Ozmen, S. Ildan [2 ]
Havare, Ali Kemal [3 ,4 ]
Gubur, H. Metin [1 ]
机构
[1] Mersin Univ, Dept Phys, Mersin, Turkiye
[2] Mersin Univ, Adv Technol Educ Res & Applicat Ctr, Mersin, Turkiye
[3] Toros Univ, Elect & Elect Engn Photoelect Lab PEL, Mersin, Turkiye
[4] Toros Univ, Renewable Energy Technol Educ Res & Applicat Ctr Y, Mersin, Turkiye
关键词
chemical bath deposition; SEM CdS films; annealing effect; conductivity; hall effect; SULFIDE THIN-FILMS; OPTICAL-PROPERTIES; CADMIUM-SULFIDE; SOLAR-CELL; NANOSTRUCTURES; FABRICATION; NANOWIRES; CBD; TEMPERATURE; NETWORK;
D O I
10.1088/1402-4896/acddab
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
This paper focuses on the structural, morphological, and optical properties of the CdS thin films on the glass substrate with the effect of annealing. Chemical bath deposition (CBD) is a basic technique that is used in this work to form CdS thin films. The films ' (d) thickness is calculated to be 400 nm. According to the XRD results, the particle sizes for the as-deposited and the annealed CdS film are 15.15 nm and 16.56 nm, respectively. The SEM images of formed nanowalls in the films were compared for both the as-deposited and the annealed CdS structure. It was attained with the Raman spectroscopy analysis that as-deposited and annealed films include the LO phonon modes of the CdS. Moreover, FT-IR analysis was performed to determine the hydroxide ion (OH-) behavior depending on the annealing effect. The optical band gap energy of the annealed CdS nanowalls reduced from 2.31 eV to 2.19 eV, according to the UV measurements. Additionally, the Hall Effect is used to assess the conductivity and resistivity of as-deposited and annealed films. This work demonstrated that CdS films readily form nanowalls at 85 degrees C.
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页数:10
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