Raman and ODMR Spectroscopy of NV Centers in Nanolayers and Nanopillars of {111}Diamond after Etching with a Focused Beam of Ga Ions

被引：0

作者：

Kartashov, I. A. ^{[1
,2
,3
]}

Podlesnyi, S. N. ^{[1
]}

Antonov, V. A. ^{[1
]}

Popov, V. P. ^{[1
]}

Pal'yanov, Yu. N. ^{[2
,4
]}

机构：

[1] Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia

[2] Novosibirsk State Univ, Novosibirsk 630090, Russia

[3] Novosibirsk State Tech Univ, Novosibirsk 630073, Russia

[4] Russian Acad Sci, Sobolev Inst Geol & Mineral, Siberian Branch, Novosibirsk 630090, Russia

来源：

OPTOELECTRONICS INSTRUMENTATION AND DATA PROCESSING | 2023年 / 59卷 / 06期

关键词：

artificial diamond; nanostructures with NV- centers; optical detection of magnetic resonances; Raman scattering; DIAMOND; IMPLANTATION;

D O I：

10.3103/S8756699023060067

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The spectral characteristics of the optically detected magnetic resonance of negatively charged nitrogen-vacancy (NV-) centers in synthetic diamonds and nanopillars on their surface formed by a focused Ga+ ion beam, when the lower spin sublevels are populated with microwave radiation, are studied. In the course of studies for emerging spin resonances at different values of the external magnetic field, both a significant decrease in the gyromagnetic ratio and a significant drop in the photoluminescence contrast are revealed for the directions of the NV- centers inclined to the axis of the nanopillars due to residual defects from ion etching recorded on Raman spectra in the form of peaks from amorphous carbon and graphite and the stresses they create.

引用

页码：677 / 685

页数：9