Effect of Formation Conditions for Hafnium Oxide Films on Structural and Electrophysical Properties of Heterostructures

被引：0
|
作者：
Afanasyev, M. S. [1 ]
Belorusov, D. A. [1 ]
Kiselev, D. A. [1 ]
Luzanov, V. A. [1 ]
Chucheva, G. V. [1 ]
机构：
[1] Russian Acad Sci, Kotelnikov Inst Radio Engn & Elect, Fryazino Branch, Fryazino 141190, Moscow Oblast, Russia
来源：
JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS | 2023年 / 68卷 / 10期
基金：
俄罗斯科学基金会;
关键词：
FERROELECTRIC HFO2; THIN-FILMS; TEMPERATURE; PHASE;
D O I：
10.1134/S1064226923100017
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Hafnium oxide (HfO2) films are synthesized on silicon substrates using magnetron sputtering under various technological conditions. The results on the structural composition of HfO2 films and the electrical properties of metal-insulator-semiconductor heterostructures (Ni- HfO2-Si) based on them are presented.
引用
收藏
页码：1191 / 1196
页数：6
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