A theoretical investigation of the lead-free double perovskites halides Rb2XCl6 (X = Se, Ti) for optoelectronic and thermoelectric applications

被引:53
|
作者
Al-Qaisi, Samah [1 ]
Mebed, Abdelazim M. M. [2 ,3 ]
Mushtaq, Muhammad [4 ]
Rai, D. P. [5 ]
Alrebdi, Tahani A. A. [6 ]
Sheikh, Rais Ahmad [7 ]
Rached, Habib [8 ,9 ]
Ahmed, R. [10 ,11 ]
Faizan, Muhammad [12 ,13 ,14 ]
Bouzgarrou, S. [15 ,16 ]
Javed, Muhammad Anjum [9 ]
机构
[1] Palestinian Minist Educ & Higher Educ, Nablus, Palestine
[2] Jouf Univ, Coll Sci, Dept Phys, Sakaka, Al Jouf, Saudi Arabia
[3] Assiut Univ, Fac Sci, Phys Dept, Assiut, Egypt
[4] Univ Poonch, Dept Phys, Rawalakot, Pakistan
[5] Mizoram Univ, Pachhunga Univ Coll, Phys Sci Res Ctr PSRC, Dept Phys, Aizawl, India
[6] Princess Nourah Bint Abdulrahman Univ, Coll Sci, Dept Phys, Riyadh, Saudi Arabia
[7] Jazan Univ, Coll Engn, Dept Elect Engn, Jazan, Saudi Arabia
[8] Hassiba Benbouali Univ Chlef, Fac Exact Sci & Informat, Dept Phys, Chlef, Algeria
[9] DjillaliLiabes Univ SidiBel Abbes, Fac Exact Sci, Dept Mat & Sustainable Dev, Magnet Mat Lab, Sidibel Abbes, Algeria
[10] Univ Punjab, Ctr High Energy Phys, Quaid E Azam Campus, Lahore, Pakistan
[11] Univ Teknol Malaysia, Fac Sci, Dept Phys, UTM, Skudai, Johor, Malaysia
[12] Univ Peshawar, Dept Phys, Peshawar, Pakistan
[13] Jilin Univ, State Key Lab Superhard Mat, Changchun, Peoples R China
[14] Jilin Univ, Sch Mat Sci & Engn, Changchun, Peoples R China
[15] Qassim Univ, Coll Sci, Dept Phys, Buraydah, Saudi Arabia
[16] Fac Sci Monastir, Lab Microelect & Instrumentat UR 03 13 04, Monastir, Tunisia
关键词
absorption coefficients; double perovskites; optoelectronics; p-type conductivity; thermoelectric properties; ELASTIC PROPERTIES; DEFECT TOLERANCE; STABILITY; SOLIDS; SN;
D O I
10.1002/jcc.27119
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
In this study, structural, electronic, optical, thermoelectric, and thermodynamics properties of vacancy-ordered double perovskites Rb2XCl6 (X = Se, Ti) were explored theoretically. The results revealed that Rb2SeCl6 and Rb2TiCl6 are indirect band gap (E-g) semiconductors with E-g values of 2.95 eV, and 2.84 eV respectively. The calculated properties (phonons, elastic constant, Poisson's ratio, and Pugh's ratio) revealed that both materials are dynamically and chemically stable and can exhibit brittle (Rb2SeCl6) and ductile (Rb2TiCl6) nature. From the analysis of optical parameters, it was noticed that the refractive index of the materials has a value of 1.5-2.0 where light absorption was found from the visible to the ultraviolet region. The thermoelectric properties determined by using the BoltzTrap code demonstrated that at room temperature, the Figure of merit (ZT) was found to be 0.74 and 0.76 for Rb2SeCl6 and Rb2TiCl6, respectively. Despite a moderate value of ZT in such materials, further studies might explore effective methods for tuning the electronic band gap and improving the thermoelectric response of the material for practical energy production applications.
引用
收藏
页码:1690 / 1703
页数:14
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