Fabrication of a piezoelectric micromachined ultrasonic transducer (PMUT) with dual heterogeneous piezoelectric thin film stacking

被引:0
|
作者
Qi, Xuanmeng [1 ]
Yoshida, Shinya [2 ]
Risquez, Sarah [3 ]
Ghosh, Anirban [3 ]
Moridi, Mohssen [3 ]
Tanaka, Shuji [1 ]
机构
[1] Tohoku Univ, Dept Robot, Sendai, Japan
[2] Shibaura Inst Technol, Dept Engn Sci & Mech, Tokyo, Japan
[3] Microsyst Div, Silicon Austria Labs, Villach, Austria
关键词
piezoelectric micromachined ultrasonic transducer (pMUT); stacked two piezoelectric layers; dual-layer pMUTs; TEMPERATURE; ACTUATION;
D O I
10.1088/1361-6439/ad2306
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this study, a piezoelectric micromachined ultrasonic transducer (pMUT) was developed using dual heterogeneous piezoelectric thin films stacked on top of each other. One piezoelectric layer is specialized for the actuation, while the other is specialized for the reception of the ultrasonic waves. This combined use of two materials promises to realize a pMUT transceiver array with an excellent transmitting and receiving performance and a high fill factor. Taking fabrication feasibility into consideration, AlN/Pb(Mg1/3, Nb2/3)O3-PbTiO3 (PMN-PT) and Pb(Zr, Ti)O3 (PZT)/AlN pMUTs were selected as two candidates for prototyping as the dual-layer pMUTs. The driving tests were performed by actuation of each piezoelectric layer and a resonance frequencies around 265 kHz and 203 kHz were confirmed for AlN/PMN-PT and PZT/AlN pMUT, respectively. The diaphragm of AlN/PMN-PT pMUT has a displacement sensitivity of 3538 nm V-1 and 306 nm V-1 when actuating PMN-PT layer and AlN layer at resonance frequency, respectively. While the diaphragm of PZT/AlN pMUT has a displacement sensitivity of 1036 nm V-1 and 744 nm V-1 when actuating the PZT layer and the AlN layer at the resonance frequency, respectively.
引用
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页数:14
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