A simulation physics-guided neural network for predicting semiconductor structure with few experimental data

被引:4
|
作者
Kim, Qhwan [1 ]
Lee, Sunghee [1 ]
Ma, Ami [1 ]
Kim, Jaeyoon [1 ]
Noh, Hyeon-Kyun [1 ]
Chang, Kyu Baik [1 ]
Cheon, Wooyoung [1 ]
Yi, Shinwook [1 ]
Jeong, Jaehoon [1 ]
Kim, Bongseok [2 ]
Kim, Young-Seok [2 ]
Kim, Dae Sin [1 ]
机构
[1] Samsung Elect Co, Computat Sci & Engn Team, Hwasung 18448, Gyeonggi, South Korea
[2] Samsung Elect Co, Memory Metrol & Inspect Technol Team, Hwaseong 18448, Gyeonggi, South Korea
关键词
Optical spectrum; Critical dimensions; Ellipsometry; RCWA simulation; Physics-guided neural network;
D O I
10.1016/j.sse.2022.108568
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Prediction of semiconductor Critical Dimensions (CDs) from ellipsometry requires the machine learning model. However, proper training of a machine learning model is challenging because the measurement process of typical experimental CD data, which is mostly carried out with transmission electron microscopy (TEM), is a time-and cost-consuming process. To obtain a robust machine learning model with few experimental data, we propose a physics-guided neural network (PGNN) architecture. PGNN extracts spectrum-CD physics from simulation data and constructs physics-guided loss function for guiding the model optimization. The proposed algorithm has superior performance compared with other baseline algorithms and can be properly trained only with small experimental CD data, including label noise.
引用
收藏
页数:4
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