Removal of metal impurities from diamond wire saw silicon powder by vacuum electromagnetic directional solidification

被引:6
|
作者
Meng, Fuqiang [1 ]
Xi, Fengshuo [1 ,2 ]
Wu, Jijun [1 ,2 ]
Ma, Wenhui [1 ,2 ,3 ]
Wei, Kuixian [1 ,2 ]
Li, Shaoyuan [1 ,2 ]
Chen, Zhengjie [1 ,2 ]
Ren, Yongsheng [1 ,2 ]
机构
[1] Kunming Univ Sci & Technol, Fac Met & Energy Engn, Kunming 650093, Peoples R China
[2] Kunming Univ Sci & Technol, Natl Engn Res Ctr Vacuum Met, State Key Lab Complex Nonferrous Met Resources Cle, Kunming 650093, Peoples R China
[3] Puer Univ, Sch Sci & Technol, Puer 665000, Peoples R China
基金
中国国家自然科学基金;
关键词
Diamond wire saw silicon powder; Silicon purification; Metal impurities; Vacuum refining; Electromagnetic solidification; METALLURGICAL-GRADE SILICON; SURFACE-MORPHOLOGY; KERF LOSS; WASTE; CUT;
D O I
10.1016/j.vacuum.2023.112948
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The utilization of high-purity silicon (similar to 99.9999 %) is prevalent in the solar photovoltaic sector, and achieving a reduction in its cost has emerged as a pivotal engineering objective within the silicon solar industry. Recycling silicon from diamond wire saw silicon powder (DWSSP) is a promising solution to fulfill the continuously expanding of high purity silicon demand. Vacuum directional solidification technology using high-frequency electromagnetic induction heating was proposed to purify DWSSP for the first time efficiently. The silicon melt and gas interface reaction, as well as metal impurities' microsegregation in silicon ingot were observed. The effects of vacuum level and electromagnetic force on the separation of silicon and metal impurities were investigated using thermodynamics and electromagnetic mechanics. Results indicate that the content of oxygen in the silicon reduced from 30.91 wt% to 5.08 wt%, and the actual sample composition including for uptake of residual gas contamination steadily declined as the vacuum level increased from 600 Pa to 10 Pa. Vacuum electromagnetic directional solidification reduced the content of metal impurities from 641 ppmw to 29.80 ppmw, increases the proportion of crystalline silicon area, and makes the silicon lattice arrangement more regular.
引用
收藏
页数:11
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