Transparent organic memory based on quantum dots floating gate

In order to meet the development of the new generation of electronic technology,it is increasingly important to develop different kinds of new memory. Compared with traditional memory,the new generation memory is required to have higher performance memory features,and meet the needs of specific applications such as flexibility,transparency,or neuromorphic functions. In this paper,an organic transparent memory (transparency >= 83%)is proposed with organic semiconductor material C8-BTBT as semiconductor layer and PVP quant mu m dot blending as floating gate. The device has a memory window of more than 40 V, and the programming/ erasing current ratio is more than 10(3),the switching state can be resolved stably after 10(4) s. This paper provides a new solution for transparent flexible devices and foreshadows their potential applications in the next generation of transparent organic electronics.