Thermal characteristics of III-V microlasers bonded onto silicon board

被引：0

作者：

Dragunova, A. S. ^{[1
]}

Kryzhanovskaya, N. V. ^{[1
,2
]}

Zubov, F. I. ^{[1
,2
]}

Moiseev, E. I. ^{[1
]}

Nadtochiy, A. M. ^{[1
,3
]}

Fominykh, N. A. ^{[1
]}

Ivanov, K. A. ^{[1
]}

Maximov, M. V. ^{[1
,2
]}

Vorobyev, A. A. ^{[2
]}

Mozharov, A. M. ^{[2
]}

Kalyuzhnyy, N. A. ^{[3
]}

Mintairov, S. A. ^{[3
]}

Gordeev, N. Yu. ^{[3
]}

Guseva, Yu. A. ^{[3
]}

Kulagina, M. M. ^{[3
]}

Zhukov, A. E. ^{[1
]}

机构：

[1] HSE Univ, St Petersburg, Russia

[2] Alferov Univ, St Petersburg, Russia

[3] Ioffe Inst, St Petersburg, Russia

来源：

ST PETERSBURG POLYTECHNIC UNIVERSITY JOURNAL-PHYSICS AND MATHEMATICS | 2023年 / 16卷 / 01期

基金：

俄罗斯科学基金会;

关键词：

hybrid integration; microlaser; quantum well dots; thermal resistance;

D O I：

10.18721/JPM.161.216

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In this work, we study the characteristics of semiconductor microlasers based on the heterostructure with two coupled waveguides intended to improve heat dissipation in cw regime. We analysed total output optical loss of the microlasers, their spectral characteristics, output power, emission pattern and thermal resistance. We observed that the use of the principle of two coupled resonant planar waveguides, active and passive, as well as p-side down bonding, significantly reduces the thermal resistance of microlasers and improves their performance.

引用

页码：108 / 113

页数：6

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